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| Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 1.60.15 Unit: mm s Features q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.60.1 1.00.1 0.5 1 0.5 3 2 0.450.1 0.3 0.750.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings 60 50 7 200 100 125 125 -55 ~ +125 Unit V V V mA mA mW C C 1:Base 2:Emitter 3:Collector EIAJ:SC-75 SS-Mini Type Package Marking symbol : Y s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob * Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 100A, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.20.1 max 0.1 100 +0.1 Unit A A V V V 60 50 7 160 90 0.1 150 3.5 0.3 460 V MHz pF *h FE1 Rank classification Rank hFE1 Q 160 ~ 260 YQ R 210 ~ 340 YR S 290 ~ 460 YS Marking Symbol 1 Transistor PC -- Ta 150 60 Ta=25C IB=160A 125 50 1000 2SD2216 IC -- VCE 1200 VCE=10V Ta=25C IB -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 100 40 Base current IB (A) 140A 120A 100A 30 80A 20 60A 40A 10 20A 800 75 600 50 400 25 200 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC -- VBE 240 VCE=10V 200 200 240 VCE=10V Ta=25C IC -- I B Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 Collector current IC (mA) 160 Collector current IC (mA) 160 120 Ta=75C 80 25C -25C 120 80 25C Ta=75C -25C 40 40 0 0 0.4 0.8 1.2 1.6 2.0 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Base current IB (A) Collector current IC (mA) hFE -- IC 600 VCE=10V 300 fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 10 30 100 240 400 Ta=75C 25C 180 300 -25C 200 120 100 60 0 0.1 0.3 1 3 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) 2 |
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